Photon antibunching at high temperature from a single InGaAs/GaAs quantum dot
Identifieur interne : 00A772 ( Main/Repository ); précédent : 00A771; suivant : 00A773Photon antibunching at high temperature from a single InGaAs/GaAs quantum dot
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Abstract
We report the observation of photon antibunching from a single, self-assembled InGaAs/GaAs quantum dot at temperatures up to 135 K. The second-order intensity correlation, g(2)(0), is measured to be less than 0.260 for temperatures up to 100 K. At 120 K, g(2)(0) increases to about 0.471, which is slightly less than the second-order intensity correlation expected from two independent single emitters. At 135 K, g(2)(0) is 0.667, which still indicates nonclassical light emission that is equivalent to having three independent single emitters.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Photon antibunching at high temperature from a single InGaAs/GaAs quantum dot</title><author><name sortKey="Mirin, Richard P" uniqKey="Mirin R">Richard P. Mirin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Optoelectronics Division, National Institute of Standards and Technology, Boulder, Colorado 80305</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Colorado</region></placeName><wicri:cityArea>Optoelectronics Division, National Institute of Standards and Technology, Boulder</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0096965</idno><date when="2004-02-23">2004-02-23</date><idno type="stanalyst">PASCAL 04-0096965 AIP</idno><idno type="RBID">Pascal:04-0096965</idno><idno type="wicri:Area/Main/Corpus">00BE94</idno><idno type="wicri:Area/Main/Repository">00A772</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Photoluminescence</term><term>Photon antibunching</term><term>Self-assembly</term><term>Semiconductor quantum dots</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4250D</term><term>7866F</term><term>7855C</term><term>7867H</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Point quantique semiconducteur</term><term>Autoassemblage</term><term>Dégroupement photon</term><term>Photoluminescence</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report the observation of photon antibunching from a single, self-assembled InGaAs/GaAs quantum dot at temperatures up to 135 K. The second-order intensity correlation, g<sup>(2)</sup>(0), is measured to be less than 0.260 for temperatures up to 100 K. At 120 K, g<sup>(2)</sup>(0) increases to about 0.471, which is slightly less than the second-order intensity correlation expected from two independent single emitters. At 135 K, g<sup>(2)</sup>(0) is 0.667, which still indicates nonclassical light emission that is equivalent to having three independent single emitters.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>8</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Photon antibunching at high temperature from a single InGaAs/GaAs quantum dot</s1></fA08><fA11 i1="01" i2="1"><s1>MIRIN (Richard P.)</s1></fA11><fA14 i1="01"><s1>Optoelectronics Division, National Institute of Standards and Technology, Boulder, Colorado 80305</s1><sZ>1 aut.</sZ></fA14><fA20><s1>1260-1262</s1></fA20><fA21><s1>2004-02-23</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. 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